symbol v ds v gs i dm t j , t stg parameter symbol typ max t 10s 31 40 steady state 59 75 steady state r q jl 16 24 pulsed drain current c continuous drain current maximum -17 -13 20 power dissipation b t a =25c junction and storage temperature range t a =70c units parameter t a =25c t a =70c v v i d gate-source voltage drain-source voltage -30 absolute maximum ratings t j =25c unless otherwise noted p d maximum junction-to-lead c/w units maximum junction-to-ambient a c/w maximum junction-to-ambient ad w c/w r q ja c -55 to 150 2.0 -160 a 3.1 AO4447A v ds (v) = -30v i d = -17a (v gs = -10v) r ds(on) < 7m (v gs = -10v) r ds(on) < 8m (v gs = -4.5v) r ds(on) < 9m (v gs = -4v) the AO4447A uses advanced trench technology to provide excellent r ds(on) with low gate charge.this device is ideal for load switch and battery protect ion applications. g d s rg soic-8 www.freescale.net.cn 1/5 30v p-channel mosfet general description features
symbol min typ max units bv dss -30 v -1 t j = 55c -5 i gss 10 m a v gs(th) -0.8 -1.3 -1.6 v i d(on) -160 a 5.5 7 t j =125c 7 8.5 6.5 8 6.9 9 g fs 70 s v sd -0.62 -1 v i s -3 a c iss 4580 5500 pf c oss 755 pf c rss 564 pf r g 160 210 w q g (-10v) 87 105 nc q g (-4.5v) 41 nc q gs 12.8 nc q gd 17 nc t d(on) 180 ns t r 260 ns t d(off) 1.2 m s t f 9.7 m s t rr 32 40 ns q rr 77 nc #ref! i d =-250 m a, v gs = 0v v gs =-10v, v ds =-5v v ds =-30v, v gs = 0v v ds = 0v, v gs =16v v ds =v gs i d =-250 m a body diode reverse recovery time body diode reverse recovery charge i f =-17a, di/dt=300a/ m s v gs =-10v, i d =-17a reverse transfer capacitance i f =-17a, di/dt=300a/ m s diode forward voltage v gs =-4.5v, i d =-15a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss drain-source breakdown voltage turn-off delaytime v gs =-10v, v ds =-15v r l =-0.9 w , r gen =3 w turn-off fall time turn-on delaytime turn-on rise time gate source charge gate drain charge maximum body-diode continuous current total gate charge v gs =-10v, v ds =-15v, i d =-17a output capacitance i s =-1a,v gs = 0v gate resistance switching parameters dynamic parameters m w v gs =-4v, i d =-13a static drain-source on-resistance m a on state drain current zero gate voltage drain current gate-body leakage current gate threshold voltage r ds(on) v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =-15v, f=1mhz input capacitance v ds =-5v, i d =-17a forward transconductance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 1: nov. 2010 www.freescale.net.cn 2/5 AO4447A 30v p-channel mosfet
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics(note e) -i d (a) -3.5v -4v -10v -3v -4.5v 0 20 40 60 80 100 0 1 2 3 4 -v gs (volts) figure 2: transfer characteristics(note e) -i d (a) 25c 125c v ds =-5v 2 4 6 8 10 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage(note e) r ds(on) (m w w w w ) v gs =-10v v gs =-4.5v v gs =-4v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics(note e) i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature(note e) normalized on-resistance 0 4 8 12 16 20 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage(note e) r ds(on) (m w w w w ) i d = -17a 25c 125c v gs = -2.5v v gs = -10v i d = -17a v gs = -4.5v i d = -15a www.freescale.net.cn 3/5 AO4447A 30v p-channel mosfet
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 20 40 60 80 100 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance(note f) z q q q q ja normalized transient thermal resistance 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 1ms 100ms 10s 10 m s dc v ds =-15v i d = -17a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4/5 AO4447A 30v p-channel mosfet
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) www.freescale.net.cn 5/5 AO4447A 30v p-channel mosfet
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